, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon transistors telephone: (973) 376-2922 029e9-10 D29E9J1-10J1 d33d29-30 d33d29j1-30j1 the pnp d29e9-10 series and the npn d33d29-30 series are silicon, planar, passivated, epitaxial transistors intended for general purpose appli- cations. these complementary pairs are especially suited for the drive stage in high power amplifiers, and for control and television circuitry. features: ? low collector saturation voltage ? excellent beta linearity over a wide current range ? heatsinking available on all units note: observe proper polarity on biases for pnp's and npn's. absolute maximum ratings: (25c) (unless otherwise specified) voltages collector to emitter vceo 60 emmitter to base vebo 5 collector to base vcbo 70 collector to emitter vcks 70 current collector (continuous) ic 750 collector (pulsed, 300 msec., pulse width,-2% duty cycle) icm 1000 dissipation volts volts volts volts total power (free air, t,^25c)* total power with jl heatsink (free air, ta - 25c) ** total power with jl heatsink (case temp., tc - 25c) *** temperature storage operating lead soldering (yi?" %a" from case for 10 sec. max.) pt pt pt tl 500 700 1000 -65 to +150 -65 to +150 + 260 *derate 4.0 mw/c increase in ambient temperature above 25c. **derate 5.6 mw/c increase in ambient temperature above 25c. ***derate 8.0 mw/c increase in case temperature above 25"c. electrical characteristics: (25c) (unless otherwise specified) note: characteristics apply to both heatsinked and non-heatsinked devices. static characteristics collector cutoff current (vco = 25v) ices (vc? = 25v, ti = 100c) ices forward current transfer ratio (io = 2ma,vca = 2v) d29e9/d33d29 hn d29e10/d33d30 h? (ic = 500ma, vce = 2v) d29e9/d33d29 '*kn d29e10/d33d30 **hpb collector emitter breakdown voltage do = 10ma) **v(br>ceo (ic = 10 fia) vces emitter base breakdown voltage (ii = 10^?a) v base saturation voltage do = 500 ma, ib = 50 ma) ** vbe,s4t, dynamic characteristics output capacitance, common base (vcb = 10v, f = 1mhz) ccb input capacitance, common base (vib = 0.5v, f = 1 mhz) c.6 gain bandwidth product do = 50 ma, vce = 2v, f = 20 mhz) d29e9/d33d29 ft d29e10/d33d30 ft "pulse conditions: pulse width < 300/js duty cycle < 2% min. go 100 20 25 60 70 max. 100 15 120 200 na ."a 0.75 1.2 15 55 80 120 volts volts volts volts volts pf pp mhz
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